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ITCH15401D4 - High Power RF LDMOS FET

Datasheet Summary

Description

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Typical Performance (on Innogration 1.3GHz narrow band fixture with device soldered): Vdd=28V, Vgs=2.57V, Idq=400mA,Tc=25 degree C, Test signal: CW, Freq(MHz)

Features

  • Low cost, high reliable solution.
  • High Efficiency and Linear Gain Operations.
  • Integrated ESD Protection.
  • Internally Matched for Ease of Use.
  • Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation.
  • Excellent thermal stability, low HCI drift.
  • Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC Table 1. Maximum Ratings Rating Drain--Source Voltage Gate--Source Voltage.

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Datasheet preview – ITCH15401D4

Datasheet Details

Part number ITCH15401D4
Manufacturer Innogration
File Size 564.09 KB
Description High Power RF LDMOS FET
Datasheet download datasheet ITCH15401D4 Datasheet
Additional preview pages of the ITCH15401D4 datasheet.

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Full PDF Text Transcription

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Innogration (Suzhou) Co., Ltd. Document Number: ITCH15401D4 Preliminary Datasheet V2.0 1300-1500MHz, 400W, High Power RF LDMOS FETs Description ITCH15401D4 is a 400-watt, internally matched LDMOS FETs, designed for multiple applications with frequencies from 1300-1500MHz .  Typical Performance (on Innogration 1.3GHz narrow band fixture with device soldered): Vdd=28V, Vgs=2.57V, Idq=400mA,Tc=25 degree C, Test signal: CW, Freq(MHz) Pin(dBm) Pout(dBm) Pout(W) Id(A) Gp(dB) Eff 1300 37.7 56.3 430 24.5 18.6 63% ITCH15401D4 Features  Low cost, high reliable solution.
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