ITCH15401D4 Datasheet High Power RF LDMOS FET

Manufacturer: Innogration

ITCH15401D4 high power rf ldmos fet by Innogration - Datasheet Preview

Datasheet Details

Part number	ITCH15401D4
Manufacturer	Innogration
File Size	564.09 KB
Description	High Power RF LDMOS FET
Datasheet	ITCH15401D4 Datasheet

General Description

ITCH15401D4 is a 400-watt, internally matched LDMOS FETs, designed for multiple applications with frequencies from 1300-1500MHz .

 Typical Performance (on Innogration 1.3GHz narrow band fixture with device soldered): Vdd=28V, Vgs=2.57V, Idq=400mA,Tc=25 degree C, Test signal: CW, Freq(MHz) Pin(dBm) Pout(dBm) Pout(W) Id(A) Gp(dB) Eff 1300 37.7 56.3 430 24.5 18.6 63% ITCH15401D4

Overview

Innogration (Suzhou) Co., Ltd.

Document Number: ITCH15401D4 Preliminary Datasheet V2.

Key Features

Low cost, high reliable solution.
High Efficiency and Linear Gain Operations.
Integrated ESD Protection.
Internally Matched for Ease of Use.
Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation.
Excellent thermal stability, low HCI drift.
Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC Table 1. Maximum Ratings Rating Drain--Source Voltage Gate--Source Voltage.

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