ITCH16180B2E
ITCH16180B2E is High Power RF LDMOS FET manufactured by Innogration.
- Part of the ITCH16180B2 comparator family.
- Part of the ITCH16180B2 comparator family.
Description
The ITCH16180B2 is a 180-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 1300 to 1700 MHz. It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats.
ITCH16180B2
- Typical Performance (On Innogration fixture with device soldered): VDD = 28 Volts, IDQ = 800 m A, Pulse CW, Pulse Width=12 us, Duty cycle=10% .
Frequency Gp (d B)
P-1d B (d Bm)
D@P-1 (%)
P-3d B (d Bm)
D@P-3 (%)
1390 MHz
1450 MHz
1529 MHz
- Typical Performance (On Innogration fixture with device soldered):
VDD = 28 Volts, IDQ = 800 m A, Pulse CW, Pulse Width=12 us, Duty cycle=10% .
Frequency Gp (d B)
P-1d B (d Bm)
D@P-1 (%)
P-3d B (d Bm)
D@P-3 (%)
1350...