• Part: ITCH16180B2E
  • Description: High Power RF LDMOS FET
  • Manufacturer: Innogration
  • Size: 1.01 MB
Download ITCH16180B2E Datasheet PDF
Innogration
ITCH16180B2E
ITCH16180B2E is High Power RF LDMOS FET manufactured by Innogration.
- Part of the ITCH16180B2 comparator family.
Description The ITCH16180B2 is a 180-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 1300 to 1700 MHz. It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats. ITCH16180B2 - Typical Performance (On Innogration fixture with device soldered): VDD = 28 Volts, IDQ = 800 m A, Pulse CW, Pulse Width=12 us, Duty cycle=10% . Frequency Gp (d B) P-1d B (d Bm) D@P-1 (%) P-3d B (d Bm) D@P-3 (%) 1390 MHz 1450 MHz 1529 MHz - Typical Performance (On Innogration fixture with device soldered): VDD = 28 Volts, IDQ = 800 m A, Pulse CW, Pulse Width=12 us, Duty cycle=10% . Frequency Gp (d B) P-1d B (d Bm) D@P-1 (%) P-3d B (d Bm) D@P-3 (%) 1350...