ITCH16180B2E - High Power RF LDMOS FET

Product Overview

Innogration

Datasheet Details

Part number	ITCH16180B2E
Manufacturer	Innogration
File Size	1.01 MB
Description	High Power RF LDMOS FET
Datasheet	ITCH16180B2E Datasheet
Note	This datasheet PDF includes multiple part numbers: ITCH16180B2E, ITCH16180B2. Please refer to the document for exact specifications by model.
Additional preview pages of the ITCH16180B2E datasheet.

Product details

Description

The ITCH16180B2 is a 180-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 1300 to 1700 MHz. Typical Performance (On Innogration fixture with device soldered): VDD = 28 Volts, IDQ = 800 mA, Pulse CW, Pulse Width=12 us, Duty cycle=10% .

Features

High Efficiency and Linear Gain Operations.
Integrated ESD Protection.
Internally Matched for Ease of Use.
Excellent thermal stability, low HCI drift Table 1. Maximum Ratings Rating Drain--Source Voltage Gate--Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature.
Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation.
Pb-free, RoHS-compliant Symbol Value Unit VDSS 70 Vdc VGS -10 to +10 Vdc VD.

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Published: Aug 5, 2018 |