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ITCH16180B2E Datasheet, Innogration

ITCH16180B2E fet equivalent, high power rf ldmos fet.

ITCH16180B2E Avg. rating / M : 1.0 rating-11

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ITCH16180B2E Datasheet

Features and benefits


* High Efficiency and Linear Gain Operations
* Integrated ESD Protection
* Internally Matched for Ease of Use
* Excellent thermal stability, low HCI drift.

Application

with frequencies from 1300 to 1700 MHz. It Can be used in Class AB/B and Class C for all typical cellular base station m.

Description

The ITCH16180B2 is a 180-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 1300 to 1700 MHz. It Can be used in Class AB/B and Class C for all typical cellular base .

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TAGS

ITCH16180B2E
High
Power
LDMOS
FET
ITCH16180B2
ITCH16180B4
ITCH16180B4E
Innogration

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