PXFC193808SV fet equivalent, thermally-enhanced high power rf ldmos fet.
include input and output matching, high gain and a thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provid.
in the 1805 to 1880 MHz frequency band. Features include input and output matching, high gain and a thermally-enhanced p.
The PXFC193808SV is a 380-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input and output matching, high gain and a thermally-enhanced package with earl.
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