PXFC192207SH fet equivalent, thermally-enhanced high power rf ldmos fet.
include input and output matching, high gain and thermally-enhanced package with earless flanges. Manufactured with Infineon's advanced LDMOS process, this device provide.
in the 1805 to 1990 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced pac.
The PXFC192207SH is a 220-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1990 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earles.
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