PXFC192207NF fet equivalent, thermally-enhanced high power rf ldmos fet.
include input and output matching, high gain and a thermally-enhanced plastic package. Manufactured with Infineon's advanced LDMOS process, this device provides excellent.
in the 1805 to 1990 MHz frequency band. Features include input and output matching, high gain and a thermally-enhanced p.
The PXFC192207NF is a 220-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1990 MHz frequency band. Features include input and output matching, high gain and a thermally-enhanced plastic package. .
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