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PXFC211507SC Datasheet Thermally-Enhanced High Power RF LDMOS FET

Manufacturer: Infineon

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Datasheet Details

Part number PXFC211507SC
Manufacturer Infineon
File Size 193.28 KB
Description Thermally-Enhanced High Power RF LDMOS FET
Datasheet download datasheet PXFC211507SC Datasheet

General Description

The PXFC211507SC is a 150-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110 to 2170 MHz frequency band.

Overview

PXFC211507SC Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 2110 – 2170.

Key Features

  • include input and output matching, high gain and a thermally-enhanced package with earless flanges. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PXFC211507SC Package H-37248G-4/2 (formed leads) Gain (dB) Drain Efficiency (%) Two-carrier WCDMA Drive-up VDD = 28 V, VGS = 2.6 V, IDQ = 960 mA, ƒ = 2115 MHz, 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW 21 56 20 Gain 19 48 40 18 32 17 24 16 1.

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