PXAC201602FC fet equivalent, thermally-enhanced high power rf ldmos fet.
input and output matching, and a thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent therm.
in the 1880 to 1920 MHz and 2010 to 2025 MHz frequency bands. It features input and output matching, and a thermally-enh.
The PXAC201602FC is a 140-watt LDMOS FET for use in multistandard cellular power amplifier applications in the 1880 to 1920 MHz and 2010 to 2025 MHz frequency bands. It features input and output matching, and a thermally-enhanced package with earless.
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