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PXAC210552FC - Thermally-Enhanced High Power RF LDMOS FET

General Description

The PXAC210552FC is a 55-watt LDMOS FET with an asymmetric design for use in multi-standard cellular power amplifier applications in the 1805 to 2170 MHz frequency band.

Key Features

  • dual-path design, t input and output matching, and a thermally-enhanced package with c earless flange. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and u superior reliability. Peak/Average Ratio, Gain (dB) Efficiency (%) d Single-carrier WCDMA Drive-up o VDD = 26 V, IDQ = 120 mA, ƒ = 2170 MHz r 3GPP WCDMA signal, 10 dB PAR, 3.84 MHz bandwidth p 32 80 Efficiency 28 60 d 24 40 e 20 20 u 16 Gain 0 in 12 -20 t 8 -40 PAR.

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Datasheet Details

Part number PXAC210552FC
Manufacturer Wolfspeed
File Size 1.07 MB
Description Thermally-Enhanced High Power RF LDMOS FET
Datasheet download datasheet PXAC210552FC Datasheet

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Full PDF Text Transcription for PXAC210552FC (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for PXAC210552FC. For precise diagrams, tables, and layout, please refer to the original PDF.

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PXAC210552FC Thermally-Enhanced High Power RF LDMOS FET 55 W, 28 V, 1805 – 2170 MHz Description The PXAC210552FC is a 55-watt LDMOS FET with an asymmetric design for use in multi-standard cellular power amplifier applications in the 1805 to 2170 MHz frequency band. It features dual-path design, t input and output matching, and a thermally-enhanced package with c earless flange. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and u superior reliability. Peak/Average Ratio, Gain (dB) Efficiency (%) d Single-carrier WCDMA Drive-up o VDD = 26 V, IDQ = 120 mA, ƒ = 2170 MHz r 3GPP WCDMA signal, 10 dB PAR, 3.84 MHz bandwidth p 32 80 Efficiency 28 60 d 24 40 e 20 20 u 16 Gain 0 in 12 -20 t 8 -40 PAR @ 0.