PXAC241702FC fet equivalent, thermally-enhanced high power rf ldmos fet.
include dual-path design, high gain and thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellen.
in the 2300 to 2400 MHz frequency band. Features include dual-path design, high gain and thermally-enhanced package with.
The PXAC241702FC is a 28 V LDMOS FET with an asymm etrical design intended for use in multi-standard cellular power amplifier applications in the 2300 to 2400 MHz frequency band. Features include dual-path design, high gain and thermally-enhanced p.
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