Datasheet4U Logo Datasheet4U.com

PXAC241702FC Datasheet Thermally-Enhanced High Power RF LDMOS FET

Manufacturer: Infineon

📥 Download Datasheet

General Description

The PXAC241702FC is a 28 V LDMOS FET with an asymm­­ etrical design intended for use in multi-standard cellular power amplifier applications in the 2300 to 2400 MHz frequency band.

Overview

PXAC241702FC Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 2300 – 2400.

Key Features

  • include dual-path design, high gain and thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PXAC241702FC Package H-37248-4 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 360 mA, ƒ = 2300 MHz 3GPP WCDMA signal, 10 dB PAR, 3.84 MHz BW 24 Efficiency 20 16 Gain 75 50 25 12 0 8 PAR @ 0.01% CCDF 4 -25 -50 0 -75c241702fc-gr1a.

More Datasheets from Infineon

Part Number Description
PXAC243502FV High Power RF LDMOS Field Effect Transistor
PXAC201202FC Thermally-Enhanced High Power RF LDMOS FET
PXAC201602FC Thermally-Enhanced High Power RF LDMOS FET
PXAC203302FV Thermally-Enhanced High Power RF LDMOS FET
PXAC260602FC Thermally-Enhanced High Power RF LDMOS FET
PXAC260622SC Thermally-Enhanced High Power RF LDMOS FET
PXAC261002FC Thermally-Enhanced High Power RF LDMOS FET
PXAC261212FC Thermally-Enhanced High Power RF LDMOS FET
PXAC180602MD Thermally-Enhanced High Power RF LDMOS FET
PXAC182002FC Thermally-Enhanced High Power RF LDMOS FET