• Part: PXAC241702FC
  • Description: Thermally-Enhanced High Power RF LDMOS FET
  • Manufacturer: Infineon
  • Size: 350.70 KB
PXAC241702FC Datasheet (PDF) Download
Infineon
PXAC241702FC

Description

The PXAC241702FC is a 28 V LDMOS FET with an asymm­­ etrical design intended for use in multi-standard cellular power amplifier applications in the 2300 to 2400 MHz frequency band. Features include dual-path design, high gain and thermally-enhanced package with earless flange.

Key Features

  • Asymmetrical Doherty design - Main: P1dB = 60 W Typ - Peak: P1dB = 90 W Typ
  • Broadband internal input and output matching
  • Typical pulsed CW performance, 2350 M