PXAC243502FV - High Power RF LDMOS Field Effect Transistor

Product Overview

Infineon

Part number	PXAC243502FV
Manufacturer	Infineon
File Size	393.74 KB
Description	High Power RF LDMOS Field Effect Transistor
Datasheet	PXAC243502FV Datasheet
Additional preview pages of the PXAC243502FV datasheet.

The PXAC243502FV LDMOS FET is a 350-watt LDMOS FET designed for use in power amplifier applications in the 2300 MHz to 2400 MHz frequency band.

include an asymmetric design with high gain and a thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PXAC243502FV Package H-37275-4 Single-carrier WCDMA Broadband Performance VDD = 28 V, IDQ = 850 mA, POUT = 48.3 dBm, 3GPP WCDMA signal, 10 dB PAR 20 55 18 Efficiency 45 16 Gain 14 35 25 12 15 Features.
Asymmetric design - Main: 150 W P1dB - Peak: 200 W P.

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Published: Feb 21, 2016 |