PXAC243502FV Datasheet High Power RF LDMOS Field Effect Transistor

Manufacturer: Infineon

Overview: PXAC243502FV High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 – 2400.

Datasheet Details

Part number	PXAC243502FV
Manufacturer	Infineon
File Size	393.74 KB
Description	High Power RF LDMOS Field Effect Transistor
Download	PXAC243502FV Download (PDF)

The PXAC243502FV LDMOS FET is a 350-watt LDMOS FET designed for use in power amplifier applications in the 2300 MHz to 2400 MHz frequency band.

include an asymmetric design with high gain and a thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PXAC243502FV Package H-37275-4 Single-carrier WCDMA Broadband Performance VDD = 28 V, IDQ = 850 mA, POUT = 48.3 dBm, 3GPP WCDMA signal, 10 dB PAR 20 55 18 Efficiency 45 16 Gain 14 35 25 12 15 Features.
Asymmetric design - Main: 150 W P1dB - Peak: 200 W P.

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