PXAC243502FV transistor equivalent, high power rf ldmos field effect transistor.
include an asymmetric design with high gain and a thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provide.
in the 2300 MHz to 2400 MHz frequency band. Features include an asymmetric design with high gain and a thermally-enhance.
The PXAC243502FV LDMOS FET is a 350-watt LDMOS FET designed for use in power amplifier applications in the 2300 MHz to 2400 MHz frequency band. Features include an asymmetric design with high gain and a thermally-enhanced package with earless flange.
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