PXAC203302FV fet equivalent, thermally-enhanced high power rf ldmos fet.
include dual-path design, input matching, high gain and thermally-enhanced package with earless flanges. Manufactured with Infineon's advanced LDMOS process, this device .
in the 1880 to 2025 MHz frequency band. Features include dual-path design, input matching, high gain and thermally-enhan.
The PXAC203302FV is a 330-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 1880 to 2025 MHz frequency band. Features include dual-path design, input matching, high gain and the.
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