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PTVA030121EA - Thermally-Enhanced High Power RF LDMOS FET

General Description

The PTVA030121EA is an LDMOS FET characterized for use in power amplifier applications in the 390 MHz to 450 MHz frequency band.

Key Features

  • include high gain and a thermally-enhanced package. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTVA030121EA Package H-36265-2 Gain (dB) Drain Efficiency (%) CW Power Sweep VDD = 50 V, IDQ = 30 mA, ƒ = 450 MHz 28 26 Gain 24 22 20 18 16 14 31 Efficiency 33 35 37 39 Output Power (dBm) 41 90 80 70 60 50 40 30 3-1 20 43 Features.
  • Unmatched input and output.
  • Integrated ESD protecti.

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Datasheet Details

Part number PTVA030121EA
Manufacturer Infineon
File Size 313.61 KB
Description Thermally-Enhanced High Power RF LDMOS FET
Datasheet download datasheet PTVA030121EA Datasheet

Full PDF Text Transcription (Reference)

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PTVA030121EA Thermally-Enhanced High Power RF LDMOS FET 12 W, 50 V, 390 – 450 MHz Description The PTVA030121EA is an LDMOS FET characterized for use in power amplifier applications in the 390 MHz to 450 MHz frequency band. Features include high gain and a thermally-enhanced package. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.