PTFA220081M transistor equivalent, high power rf ldmos field effect transistor.
* Typical two-carrier WCDMA performance, 8 dB PAR - POUT = 33 dBm Avg - ACPR =
–40 dBc
* Typical CW performance, 940 MHz, 28 V - POUT = 40 dBm -.
with frequencies from 700 MHz to 2200 MHz. This LDMOS transistor offers excellent gain, efficiency and linearity perform.
The PTFA220081M an unmatched 8-watt LDMOS FET suitable for power amplifiers applications with frequencies from 700 MHz to 2200 MHz. This LDMOS transistor offers excellent gain, efficiency and linearity performance in a small overmolded plastic packag.
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