logo

PTFA220041M Datasheet, Infineon

PTFA220041M transistor equivalent, high power rf ldmos field effect transistor.

PTFA220041M Avg. rating / M : 1.0 rating-11

datasheet Download

PTFA220041M Datasheet

Features and benefits


* Typical two-carrier WCDMA performance, 1842 MHz, 8 dB PAR - POUT = 27 dBm Avg - ACPR =
  –44 dBc
* Typical CW performance, 1842 MHz, 28 V - POUT =.

Application

in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain, efficiency and linearity performanc.

Description

The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power amplifier applications in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain, efficiency and linearity performance in a small, overmolded plastic packag.

Image gallery

PTFA220041M Page 1 PTFA220041M Page 2 PTFA220041M Page 3

TAGS

PTFA220041M
High
Power
LDMOS
Field
Effect
Transistor
PTFA220081M
PTFA220121M
PTFA210301E
Infineon

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts