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PTFA092211FL Datasheet, Infineon

PTFA092211FL fets equivalent, thermally-enhanced high power rf ldmos fets.

PTFA092211FL Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 442.53KB)

PTFA092211FL Datasheet
PTFA092211FL Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 442.53KB)

PTFA092211FL Datasheet

Features and benefits


*
* Broadband internal matching Typical two-carrier WCDMA performance at 940 MHz, 30 V - Average output power = 50 W - Linear Gain = 18.0 dB - Efficiency = 30% - .

Application

in the 920 to 960 MHz band. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal.

Description

The PTFA092211EL and PTFA092211FL are 220-watt, internallymatched LDMOS FETs intended for EDGE and WCDMA applications in the 920 to 960 MHz band. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance.

Image gallery

PTFA092211FL Page 1 PTFA092211FL Page 2 PTFA092211FL Page 3

TAGS

PTFA092211FL
Thermally-Enhanced
High
Power
LDMOS
FETs
Infineon

Manufacturer


Infineon (https://www.infineon.com/)

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