Datasheet4U Logo Datasheet4U.com
Infineon logo

PTFA092201F Datasheet

Manufacturer: Infineon
PTFA092201F datasheet preview

PTFA092201F Details

Part number PTFA092201F
Datasheet PTFA092201F PTFA092201E Datasheet (PDF)
File Size 397.27 KB
Manufacturer Infineon
Description Thermally-Enhanced High Power RF LDMOS FETs
PTFA092201F page 2 PTFA092201F page 3

PTFA092201F Overview

The PTFA092201E and PTFA092201F are 220-watt, internallymatched LDMOS FETs intended for EDGE and WCDMA applications in the 920 to 960 MHz band. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability.

PTFA092201F Key Features

  • Average output power = 55 W
  • Linear Gain = 18.5 dB
  • Efficiency = 30%
  • Intermodulation distortion = -37 dBc
  • Adjacent channel power = -39 dBc Typical CW performance, 960 MHz, 30 V
  • Output power at P-1dB = 250 W
  • Gain = 17.5 dB
  • Efficiency = 59% Integrated ESD protection: Human Body Model, Class 2 (minimum) Excellent thermal stability, low HCI dri
  • 40 -45 -50
  • Gain Efficiency

PTFA092201F Distributor

Infineon Datasheets

More from Infineon

Datasheet4U Logo
Since 2006. D4U Semicon. About Datasheet4U Contact Us Privacy Policy Purchase of parts