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PTFA092201F Datasheet Thermally-Enhanced High Power RF LDMOS FETs

Manufacturer: Infineon

Download the PTFA092201F datasheet PDF. This datasheet also includes the PTFA092201E variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (PTFA092201E_Infineon.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number PTFA092201F
Manufacturer Infineon
File Size 397.27 KB
Description Thermally-Enhanced High Power RF LDMOS FETs
Datasheet download datasheet PTFA092201F Datasheet

General Description

The PTFA092201E and PTFA092201F are 220-watt, internallymatched LDMOS FETs intended for EDGE and WCDMA applications in the 920 to 960 MHz band.

Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability.

PTFA092201E Package H-36260-2 PTFA092201F Package H-37260-2 2-Carrier WCDMA Performance VDD = 30 V, IDQ = 1850 mA, ƒ = 960 MHz, 3GPP WCDMA signal, P/A R = 8.1 dB, 10 MHz carrier spacing, 3.84 MHz bandwidth 60 50 -30

Overview

PTFA092201E PTFA092201F Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960.

Key Features

  • IMD (dBc), ACPR (dBc) Pb-free, RoHS-compliant and thermally-enhanced packages Broadband internal matching Typical two-carrier WCDMA performance at 960 MHz, 30 V - Average output power = 55 W - Linear Gain = 18.5 dB - Efficiency = 30% - Intermodulation distortion =.
  • 37 dBc - Adjacent channel power =.
  • 39 dBc Typical CW performance, 960 MHz, 30 V - Output power at P.
  • 1dB = 250 W - Gain = 17.5 dB - Efficiency = 59% Integrated ESD protection: Huma.

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