logo
HOME
MOSFET
Toshiba
Renesas
Sanyo Denki
RF Transistor

PTFA091201E Infineon

PTFA091201E Thermally-Enhanced High Power RF LDMOS FETs

PTFA091201E Avg. rating / M : star-14

datasheet Download

PTFA091201E Datasheet

Features and benefits

include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices pro.

Application

in the 920 to 960 MHz band. Features include input and output matching, and thermally-enhanced packages with slotted or .

Image gallery

PTFA091201E PTFA091201E PTFA091201E

TAGS
PTFA091201E
Thermally-Enhanced
High
Power
LDMOS
FETs
PTFA091201F
PTFA091201GL
PTFA091201HL
Infineon
Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy