PTFA091201E fets equivalent, thermally-enhanced high power rf ldmos fets.
include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices pro.
in the 920 to 960 MHz band. Features include input and output matching, and thermally-enhanced packages with slotted or .
The PTFA091201E and PTFA091201F are 120-watt LDMOS FETs designed for ultra-linear GSM/EDGE power amplifier applications in the 920 to 960 MHz band. Features include input and output matching, and thermally-enhanced packages with slotted or earless fl.
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