Datasheet Details
| Part number | PTFA092213EL |
|---|---|
| Manufacturer | Infineon |
| File Size | 602.73 KB |
| Description | Thermally-Enhanced High Power RF LDMOS FETs |
| Datasheet |
 PTFA092213EL Datasheet
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General Description
The PTFA092213EL and PTFA092213FL are 220-watt, internallymatched LDMOS FETs designed for use in cellular power amplifier applications in the 920 to 960 MHz band.
These devices feature internal I/O matching and thermally-enhanced open-cavity ceramic packages with slotted or earless flanges.
Key Features
- Broadband internal matching.
- Typical two-carrier WCDMA performance at 960 MHz, 30 V - Average output power = 50 W - Linear Gain = 17.5 dB - Efficiency = 29% - Intermodulation distortion =.
- 32 dBc - Adjacent channel power =.
- 42.5 dBc.
- Typical CW performance, 960 MHz, 30 V - Output power at P1dB = 250 W - Linear Gain = 17.5 dB - Efficiency = 52%.
- Integrated ESD protection: Human Body Model, Class 2 (minimum).
- Excellent thermal stab.