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Infineon Technologies Electronic Components Datasheet

PTFA092213EL Datasheet

Thermally-Enhanced High Power RF LDMOS FETs

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Thermally-Enhanced High Power RF LDMOS FETs
220 W, 920 – 960 MHz
Description
The PTFA092213EL and PTFA092213FL are 220-watt, internally-
matched LDMOS FETs designed for use in cellular power amplifier
applications in the 920 to 960 MHz band. These devices feature
internal I/O matching and thermally-enhanced open-cavity ceramic
packages with slotted or earless flanges. Manufactured with Infineon's
advanced LDMOS process, these devices provide excellent thermal
performance and superior reliability.
PTFA092213EL
Package H-33288-6
PTFA092213FL
Package H-34288-4/2
PTFA092213EL
PTFA092213FL
Two-carrier WCDMA Performance
VDD = 30 V, IDQ = 1850 mA, ƒ = 960 MHz,
3GPP WCDMA signal, PAR = 8 dB,
10 MHz carrier spacing, 3.84 MHz Bandwidth
40
30
Gain
20
10 Efficiency
0
IMD_lower
-10
-20
-30
30
IMD_upper
ACPR
35 40 45
Output Power (dBm)
-20
-25
-30
-35
-40
-45
-50
-55
50
Features
• Broadband internal matching
• Typical two-carrier WCDMA performance at
960 MHz, 30 V
- Average output power = 50 W
- Linear Gain = 17.5 dB
- Efficiency = 29%
- Intermodulation distortion = –32 dBc
- Adjacent channel power = –42.5 dBc
• Typical CW performance, 960 MHz, 30 V
- Output power at P1dB = 250 W
- Linear Gain = 17.5 dB
- Efficiency = 52%
• Integrated ESD protection: Human Body Model,
Class 2 (minimum)
• Excellent thermal stability, low HCI drift
• Capable of handling 10:1 VSWR @ 30 V,
220 W (CW) output power
• Pb-free, RoHS-compliant
RF Characteristics
Two-carrier WCDMA Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
VDD = 30 V, IDQ = 1850 mA, POUT = 50 W average, ƒ1 = 950 MHz, ƒ2 = 960 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,
peak/average = 8 dB @ 0.01% CCDF
Characteristic
Symbol Min Typ Max Unit
Gain
Drain Efficiency
Gps
hD
— 17.5
— 29
dB
%
Intermodulation Distortion
IMD
— –32
dBc
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 10
Rev. 04, 2010-11-04
Free Datasheet http://www.datasheet4u.com/


Infineon Technologies Electronic Components Datasheet

PTFA092213EL Datasheet

Thermally-Enhanced High Power RF LDMOS FETs

No Preview Available !

Confidential, Limited Internal Distribution
RF Characteristics (cont.)
Two-tone Measurements (tested in Infineon test fixture)
VDD = 30 V, IDQ = 1850 mA, POUT = 200 W PEP, ƒ = 960 MHz, tone spacing = 1 MHz
Characteristic
Symbol Min
Gain
Drain Efficiency
Gps
hD
17
40
Intermodulation Distortion
IMD
PTFA092213EL
PTFA092213FL
Typ
17.5
42
–30
Max
–28
Unit
dB
%
dBc
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
Conditions
VGS = 0 V, IDS = 10 mA
VDS = 28 V, VGS = 0 V
VDS = 63 V, VGS = 0 V
VGS = 10 V, VDS = 0.1 V
VDS = 30 V, IDQ = 1850 mA
VGS = 10 V, VDS = 0 V
Symbol
V(BR)DSS
IDSS
IDSS
RDS(on)
VGS
IGSS
Min
65
2.0
Typ
0.04
2.5
Max
1.0
10.0
3.0
1.0
Unit
V
µA
µA
W
V
µA
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Storage Temperature Range
Thermal Resistance (TCASE = 70 °C, 220 W CW)
Symbol
VDSS
VGS
TJ
TSTG
RqJC
Value
65
–0.5 to +12
200
–40 to +150
0.23
Unit
V
V
°C
°C
°C/W
Ordering Information
Type and Version
PTFA092213EL V4
Package Outline
H-33288-6
PTFA092213EL V4 R250 H-33288-6
PTFA092213FL V5
H-34288-4/2
PTFA092213FL V5 R250 H-34288-4/2
Package Description
Shipping
Thermally-enhanced, slotted flange, single-ended Tray
Thermally-enhanced, slotted flange, single-ended Tape & Reel, 250 pcs
Thermally-enhanced, earless flange, single-ended Tray
Thermally-enhanced, earless flange, single-ended Tape & Reel, 250 pcs
Data Sheet
2 of 10
Rev. 04, 2010-11-04


Part Number PTFA092213EL
Description Thermally-Enhanced High Power RF LDMOS FETs
Maker Infineon
Total Page 10 Pages
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