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PTFA092201F - Thermally-Enhanced High Power RF LDMOS FETs

Download the PTFA092201F datasheet PDF. This datasheet also covers the PTFA092201E variant, as both devices belong to the same thermally-enhanced high power rf ldmos fets family and are provided as variant models within a single manufacturer datasheet.

Description

The PTFA092201E and PTFA092201F are 220-watt, internallymatched LDMOS FETs intended for EDGE and WCDMA applications in the 920 to 960 MHz band.

Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability.

Features

  • IMD (dBc), ACPR (dBc) Pb-free, RoHS-compliant and thermally-enhanced packages Broadband internal matching Typical two-carrier WCDMA performance at 960 MHz, 30 V - Average output power = 55 W - Linear Gain = 18.5 dB - Efficiency = 30% - Intermodulation distortion =.
  • 37 dBc - Adjacent channel power =.
  • 39 dBc Typical CW performance, 960 MHz, 30 V - Output power at P.
  • 1dB = 250 W - Gain = 17.5 dB - Efficiency = 59% Integrated ESD protection: Huma.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (PTFA092201E_Infineon.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number PTFA092201F
Manufacturer Infineon
File Size 397.27 KB
Description Thermally-Enhanced High Power RF LDMOS FETs
Datasheet download datasheet PTFA092201F Datasheet

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Full PDF Text Transcription

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PTFA092201E PTFA092201F Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092201E and PTFA092201F are 220-watt, internallymatched LDMOS FETs intended for EDGE and WCDMA applications in the 920 to 960 MHz band. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA092201E Package H-36260-2 PTFA092201F Package H-37260-2 2-Carrier WCDMA Performance VDD = 30 V, IDQ = 1850 mA, ƒ = 960 MHz, 3GPP WCDMA signal, P/A R = 8.1 dB, 10 MHz carrier spacing, 3.
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