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PTFA092201E Datasheet, Infineon

PTFA092201E fets equivalent, thermally-enhanced high power rf ldmos fets.

PTFA092201E Avg. rating / M : 1.0 rating-11

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PTFA092201E Datasheet

Features and benefits


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* IMD (dBc), ACPR (dBc) Pb-free, RoHS-compliant and thermally-enhanced packages Broadband internal matching Typical two-carrier WCDMA performance at 960 .

Application

in the 920 to 960 MHz band. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal.

Description

The PTFA092201E and PTFA092201F are 220-watt, internallymatched LDMOS FETs intended for EDGE and WCDMA applications in the 920 to 960 MHz band. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance a.

Image gallery

PTFA092201E Page 1 PTFA092201E Page 2 PTFA092201E Page 3

TAGS

PTFA092201E
Thermally-Enhanced
High
Power
LDMOS
FETs
Infineon

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