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IPB018N06NF2S Final datasheet
MOSFET
StrongIRFET™2 Power‑Transistor, 60 V
Features
• Optimized for wide range of applications • N‑channel, normal level • 100% avalanche tested • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21
Product validation
Qualified according to JEDEC Standard
Table 1 Parameter VDS RDS(on),max ID Qoss QG(0V..10V)
Key Performance Parameters
Value
Unit
60
V
1.8
mΩ
191
A
108
nC
108
nC
D²PAK
tab
2 1
3
32 1
Drain Pin 2, Tab
Gate Pin 1
Source Pin 3
Type/Ordering Code IPB018N06NF2S
Package PG‑TO263‑3
Marking 018N06NS
Related Links ‑
Datasheet
https://www.infineon.com
1
Revision 2.1 2024‑10‑14
Public
StrongIRFET™2 Power‑Transistor, 60 V
IPB018N06NF2S
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Description . . . . . . . . . . . . . .
IPB018N06NF2S Datasheet
