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IXTV200N10TS Datasheet Power MOSFET

Manufacturer: IXYS (now Littelfuse)

Download the IXTV200N10TS datasheet PDF. This datasheet also includes the IXTV200N10T variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (IXTV200N10T-IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

Overview

TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTV200N10T IXTV200N10TS VDSS ID25 RDS(on) = 100V = 200A ≤ 5.5mΩ PLUS220 (IXFV) Symbol VDSS VDGR VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL FC Weight 1.6mm (0.062in.) from case for 10s Plastic body for 10 seconds Mounting force (PLUS220) PLUS220 types Test Conditions T J = 25°C to 175°C T J = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C Maximum Ratings 100 100 ± 30 200 75 500 40 1.5 550 -55 ...

+175 175 -55 ...

+175 300 260 11.65 / 2.5..14.6 4 V V V A A A A J W °C °C °C °C °C N/lb.

Key Features

  • International standard packages 175°C Operating Temperature Avalanche Rated Low RDS(on) Advantages Easy to mount Space savings High power density.