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IXTA110N055P - PolarHT Power MOSFET

Download the IXTA110N055P datasheet PDF. This datasheet also covers the IXTQ110N055P variant, as both devices belong to the same polarht power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • z Md Weight 1.13/10 Nm/lb. in. 5.5 4 3 g g g z z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 μA VDS = VGS, ID = 250μA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125°C Characteristic Values Min. Typ. Max. 55 2.5 5.0 ±100 25 250 11 13.5 V Advantages z V nA μA μA mΩ z z Easy to mount Spac.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTQ110N055P_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXTA110N055T Power MOSFET
IXTA110N055T7 Power MOSFET
IXTA130N10T Power MOSFET
IXTA130N10T7 Power MOSFET
IXTA152N085T Power MOSFET

Full PDF Text Transcription

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www.DataSheet4U.com PolarHTTM Power MOSFET N-Channel Enhancement Mode IXTQ 110N055P IXTA 110N055P IXTP 110N055P VDSS ID25 RDS(on) = 55 V = 110 A = 13.5 mΩ TO-3P (IXTQ) Symbol VDSS VDGR VGS VGSM ID25 IDRMS IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Continuous Tranisent TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 10 Ω TC = 25°C Maximum Ratings 55 55 ± 20 ± 30 110 75 250 110 30 1.0 10 330 -55 ... +175 175 -55 ... +150 V V V V A A A A mJ J V/ns G G D S (TAB) G D S (TAB) TO-220 (IXTP) TO-263 (IXTA) W °C °C °C °C °C G = Gate S = Source S (TAB) D = Drain TAB = Drain 1.6 mm (0.062 in.
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