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Preliminary Technical Information
TrenchMVTM Power MOSFET
IXTA110N055T7
N-Channel Enhancement Mode Avalanche Rated
VDSS = ID25 =
RDS(on) ≤
55 110 7.0
V A mΩ
Symbol
VDSS VDGR VGSM ID25 IDM IAR EAS dv/dt
PD TJ TJM Tstg TL TSOLD Weight
Test Conditions TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ Transient TC = 25° C TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS TJ ≤175° C, RG = 5 Ω TC = 25° C
1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds
Maximum Ratings TO-263 (7-lead) (IXTA..7)
55 V 55 V
± 20
110 300
25 750
3
V
A A
A mJ
V/ns
1
7
Pin-out:1 - Gate 2, 3 - Source 4 - NC (cut) 5,6,7 - Source TAB (8) - Drain
(TAB)
230
-55 ... +175 175
-55 ...
IXTA110N055T7 Datasheet
