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IXTA130N10T7 - Power MOSFET

Features

  • Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175°C Operating Temperature Advantages Easy to mount Space savings High power density.

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Full PDF Text Transcription

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TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA130N10T7 VDSS = ID25 = RDS(on) ≤ 100V 130A 9.1mΩ Symbol VDSS VDGR VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL T SOLD Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C 1.6mm (0.062in.
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