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IXTA130N15X4-7 - Power MOSFET

Download the IXTA130N15X4-7 datasheet PDF. This datasheet also covers the IXTA130N15X4 variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • International Standard Packages.
  • Low RDS(ON) and QG.
  • Avalanche Rated.
  • Low Package Inductance Advantages.
  • High Power Density.
  • Easy to Mount.
  • Space Savings.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTA130N15X4-IXYS.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXTA130N10T Power MOSFET IXYS Corporation
IXTA130N10T N-Channel MOSFET INCHANGE
IXTA130N10T7 Power MOSFET IXYS Corporation
IXTA130N065T2 N-Channel MOSFET INCHANGE
IXTA100N04T2 N-Channel MOSFET INCHANGE

Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXTA130N15X4 Power MOSFET
IXTA130N065T2 Power MOSFET
IXTA100N04T2 Power MOSFET
IXTA100N15X4 Power MOSFET
IXTA102N15T Power MOSFET

Full PDF Text Transcription

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X4-Class Power MOSFETTM Advance Technical Information IXTA130N15X4 IXTA130N15X4-7 N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on)  150V 130A 8.0m TO-263 AA Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 150 150 20 30 V V V V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C 130 240 65 800 10 400 -55 ... +150 150 -55 ... +150 A A A mJ V/ns W C C C Maximum Lead Temperature for Soldering 300 °C 1.6 mm (0.062in.) from Case for 10s 260 °C Mounting Force 10.65 / 2.2..14.6 N/lb TO-263 TO-263 (7Leads) 2.5 g 3.
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