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IXTV230N085TS - Power MOSFET

Download the IXTV230N085TS datasheet PDF. This datasheet also covers the IXTV230N085T variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 ° C Operating Temperature Symbol Test Conditions (TJ = 25° C unless otherwise specified) BVDSS VGS = 0 V, ID = 250 µA VGS(th) VDS = VGS, ID = 250 µA IGSS VGS = ± 20 V, VDS = 0 V IDSS VDS = VDSS VGS = 0 V TJ = 150° C RDS(on) VGS = 10 V, ID = 50 A, Notes 1, 2 Characteristic Values Min. Typ. Max. 85 V 2.0 4.0 V ± 200 nA 5 µA 250 µA 3.7 4.4 mΩ Advantages Easy to.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTV230N085T-IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription

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Preliminary Technical Information TrenchMVTM Power MOSFET IXTV230N085T IXTV230N085TS N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 85 230 4.4 V A mΩ Symbol VDSS VDGR VGSM ID25 ILRMS IDM IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Weight Test Conditions TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ Transient TC = 25° C Lead Current Limit, RMS TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS TJ ≤175° C, RG = 3.3 Ω TC = 25° C 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds Mounting force (PLUS220) Maximum Ratings 85 V 85 V PLUS220 (IXTV) ± 20 230 75 520 V A G DS A PLUS220SMD (IXTV_S) A D (TAB) 40 A 1.0 J 3 550 -55 ... +175 175 -55 ... +175 300 260 11...65 /2.5...
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