Datasheet4U Logo Datasheet4U.com

IXTV200N10T - Power MOSFET

Features

  • International standard packages 175°C Operating Temperature Avalanche Rated Low RDS(on) Advantages Easy to mount Space savings High power density.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IXTV22N50P Power MOSFET IXYS
IXTV22N50P N-Channel MOSFET INCHANGE
IXTV22N50PS Power MOSFET IXYS
IXTV22N60P PolarHV Power MOSFET IXYS
IXTV22N60P N-Channel MOSFET INCHANGE

Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXTV200N10TS Power MOSFET
IXTV230N085T Power MOSFET
IXTV230N085TS Power MOSFET
IXTV250N075T Power MOSFET
IXTV250N075TS Power MOSFET

Full PDF Text Transcription

Click to expand full text
TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTV200N10T IXTV200N10TS VDSS ID25 RDS(on) = 100V = 200A ≤ 5.5mΩ PLUS220 (IXFV) Symbol VDSS VDGR VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL FC Weight 1.6mm (0.062in.) from case for 10s Plastic body for 10 seconds Mounting force (PLUS220) PLUS220 types Test Conditions T J = 25°C to 175°C T J = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C Maximum Ratings 100 100 ± 30 200 75 500 40 1.5 550 -55 ... +175 175 -55 ... +175 300 260 11.65 / 2.5..14.6 4 V V V A A A A J W °C °C °C °C °C N/lb.
Published: |