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IXTV200N10TS - Power MOSFET

Download the IXTV200N10TS datasheet PDF. This datasheet also covers the IXTV200N10T variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • International standard packages 175°C Operating Temperature Avalanche Rated Low RDS(on) Advantages Easy to mount Space savings High power density.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTV200N10T-IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXTV200N10T Power MOSFET
IXTV230N085T Power MOSFET
IXTV230N085TS Power MOSFET
IXTV250N075T Power MOSFET
IXTV250N075TS Power MOSFET

Full PDF Text Transcription

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TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTV200N10T IXTV200N10TS VDSS ID25 RDS(on) = 100V = 200A ≤ 5.5mΩ PLUS220 (IXFV) Symbol VDSS VDGR VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL FC Weight 1.6mm (0.062in.) from case for 10s Plastic body for 10 seconds Mounting force (PLUS220) PLUS220 types Test Conditions T J = 25°C to 175°C T J = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C Maximum Ratings 100 100 ± 30 200 75 500 40 1.5 550 -55 ... +175 175 -55 ... +175 300 260 11.65 / 2.5..14.6 4 V V V A A A A J W °C °C °C °C °C N/lb.
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