Datasheet4U Logo Datasheet4U.com

IXTV230N085T - Power MOSFET

Features

  • Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 ° C Operating Temperature Symbol Test Conditions (TJ = 25° C unless otherwise specified) BVDSS VGS = 0 V, ID = 250 µA VGS(th) VDS = VGS, ID = 250 µA IGSS VGS = ± 20 V, VDS = 0 V IDSS VDS = VDSS VGS = 0 V TJ = 150° C RDS(on) VGS = 10 V, ID = 50 A, Notes 1, 2 Characteristic Values Min. Typ. Max. 85 V 2.0 4.0 V ± 200 nA 5 µA 250 µA 3.7 4.4 mΩ Advantages Easy to.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IXTV230N085T N-Channel MOSFET INCHANGE
IXTV22N50P Power MOSFET IXYS
IXTV22N50P N-Channel MOSFET INCHANGE
IXTV22N50PS Power MOSFET IXYS
IXTV22N60P PolarHV Power MOSFET IXYS

Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXTV230N085TS Power MOSFET
IXTV200N10T Power MOSFET
IXTV200N10TS Power MOSFET
IXTV250N075T Power MOSFET
IXTV250N075TS Power MOSFET

Full PDF Text Transcription

Click to expand full text
Preliminary Technical Information TrenchMVTM Power MOSFET IXTV230N085T IXTV230N085TS N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 85 230 4.4 V A mΩ Symbol VDSS VDGR VGSM ID25 ILRMS IDM IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Weight Test Conditions TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ Transient TC = 25° C Lead Current Limit, RMS TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS TJ ≤175° C, RG = 3.3 Ω TC = 25° C 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds Mounting force (PLUS220) Maximum Ratings 85 V 85 V PLUS220 (IXTV) ± 20 230 75 520 V A G DS A PLUS220SMD (IXTV_S) A D (TAB) 40 A 1.0 J 3 550 -55 ... +175 175 -55 ... +175 300 260 11...65 /2.5...
Published: |