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IXTT75N10 - N-Channel MOSFET

Download the IXTT75N10 datasheet PDF. This datasheet also covers the IXTM75N10 variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • S D = Drain, TAB = Drain D (TAB) z International standard packages z Low RDS (on).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTM75N10_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXTT75N10L2 Power MOSFET
IXTT75N15 High Current Power MOSFET
IXTT74N20P Power MOSFET
IXTT76P10THV Power MOSFET
IXTT02N450HV High Voltage Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MegaMOSTMFET N-Channel Enhancement Mode IXTH / IXTM 67N10 IXTH / IXTM 75N10 IXTT 75N10 VDSS 100 V 100 V ID25 67 A 75 A RDS(on) 25 mΩ 20 mΩ TO-247 AD (IXTH) Symbol Test Conditions Maximum Ratings VDSS VDGR E VGS VGSM ID25 T IDM PD E TJ TJM L Tstg Md Weight TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C Mounting torque O Maximum lead temperature for soldering S 1.6 mm (0.062 in.) from case for 10 s 100 V 100 V ±20 V ±30 V 67N10 75N10 67N10 75N10 67 A 75 A 268 A 300 A 300 W -55 ... +150 °C 150 °C -55 ... +150 °C TO-204 TO-247 TO-268 1.13/10 Nm/lb.in.
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