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IXTT74N20P - Power MOSFET

Download the IXTT74N20P datasheet PDF. This datasheet also covers the IXTQ74N20P variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • z z 1.6 mm (0.062 in. ) from case for 10 s Mounting torque TO-3P TO-268 (TO-3P) 300 1.13/10 Nm/lb. in. 5.5 5.0 g g z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 250µA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125°C Characteristic Values Min. Typ. Max. 200 2.5 5.

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Note: The manufacturer provides a single datasheet file (IXTQ74N20P_IXYS.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription

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PolarHT Power MOSFET TM IXTQ 74N20P IXTT 74N20P VDSS ID25 www.DataSheet4U.com RDS(on) = 200 V = 74 A = 34 mΩ N-Channel Enhancement Mode Avalanche Energy Rated Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω TC = 25°C Maximum Ratings 200 200 ± 20 ± 30 74 200 60 40 1.0 10 480 -55 ... +175 175 -55 ... +150 V V V V TO-3P (IXTQ) G A A A mJ J V/ns D S (TAB) TO-268 (IXTT) G S D = Drain TAB = Drain D (TAB) W °C °C °C °C G = Gate S = Source Features z z 1.6 mm (0.062 in.
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