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IXTT76P10THV - Power MOSFET

Download the IXTT76P10THV datasheet PDF. This datasheet also covers the IXTP76P10T variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • International Standard Packages.
  • Avalanche Rated.
  • Extended FBSOA.
  • Fast Intrinsic Diode.
  • Low RDS(ON) and QG Advantages.
  • Easy to Mount.
  • Space Savings.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTP76P10T_IXYS.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription

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TrenchPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTT76P10THV IXTA76P10T IXTP76P10T IXTH76P10T D G S Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque (TO-220 & TO-247) TO-263 TO-220 TO-268HV TO-247 Maximum Ratings - 100 V - 100 V 15 V 25 V - 76 A - 230 A - 38 A 1 J 298 W -55 ... +150 C 150 C -55 ... +150 C 300 °C 260 °C 1.13 /10 Nm/lb.in. 2.5 g 3.0 g 4.0 g 6.
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