IXFH160N15T2 - Power MOSFET

IXYS (now Littelfuse)

Key Features

z International Standard Package z High Current Handling Capability z Fast Intrinsic Diode z Dynamaic dv/dt Rated z Avalanche Rated z Low RDS(on) Advantages z Easy to Mount z Space Savings z High Power Density.

IXFH160N15T2 power mosfet by IXYS (now Littelfuse) - Datasheet Preview

Datasheet Details

Part number	IXFH160N15T2
Manufacturer	IXYS (now Littelfuse)
File Size	196.09 KB
Description	Power MOSFET
Datasheet	IXFH160N15T2 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Preliminary Technical Information TrenchT2TM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH160N15T2 VDSS = ID25 = ≤ RDS(on) trr ≤ 150V 160A 9.0mΩ 160ns Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C TC = 25°C Maximum Lead Temperature for Soldering Plastic Body for 10s Mounting Torque Maximum Ratings 150 V 150 V ± 20 V ± 30 V 160 A 440 A 80 A 1.5 J 15 V/ns 880 W -55 ... +175 °C 175 °C -55 ... +175 °C 300 °C 260 °C 1.13/10 Nm/lb.in.