BD131 transistor equivalent, npn transistor.
*Designed for medium power and general purpose
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
V.
*DC Current Gain-
: hFE= 40(Min)@ IC= 0.5A
*Collector-Emitter Breakdown Voltage -
: V(BR)CEO= 45V(Min.)
*Complement to type BD132
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*D.
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