900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






SeCoS

BD13003B Datasheet Preview

BD13003B Datasheet

NPN Plastic Encapsulated Transistor

No Preview Available !

Elektronische Bauelemente
BD13003B
1.5A, 700V
NPN Plastic-Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Power Switching Applications
TO-126
CLASSIFICATION OF tS
Product-Rank
Range
BD13003B-A1
2-2.5 (µs)
BD13003B-A2
2.5-3 (µs)
1Emitter
2Collector
3Base
MARKING
13003
=Solid dot
*Solid dot=Green molding compound device, if none, the normal device.
A
E
F
N
L
M
K
B
H
C
D
ORDER INFORMATION
Part Number
Type
Collector
2
G
J
BD13003B-
BD13003B- -C
Lead (Pb)-free
Lead (Pb)-free and Halogen-free
1
Base
* =Rank
3
Emitter
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
REF.
A
B
C
D
E
F
G
Millimeter
Min. Max.
7.40 7.80
2.50 2.90
10.60 11.00
15.30 15.70
3.70 3.90
3.90 4.10
2.29 TYP.
REF.
H
J
K
L
M
N
Millimeter
Min. Max.
1.10 1.50
0.45 0.60
0.66 0.86
2.10 2.30
1.17 1.37
3.00 3.20
Parameter
Symbol
Ratings
Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Power Dissipation
Junction and Storage Temperature
VCBO
VCEO
VEBO
IC
PC
TJ, TSTG
700
400
9
1.5
1.5
150, -55~150
V
V
V
A
W
°C
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max.
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
V(BR)CBO
V(BR)CEO
700
400
-
-
-
-
Emitter-Base Breakdown Voltage
V(BR)EBO
9
-
-
Collector Cut-off Current
ICBO
ICEO
-
-
-1
- 0.5
Emitter Cut-off Current
DC Current Gain
IEBO
-
-
1
20 - 30
hFE
5- -
Collector-Emitter Saturation Voltage
VCE(sat)
-
- 0.6
Base-Emitter Saturation Voltage
Transition Frequency
VBE(sat)
fT
-
-
- 1.2
5-
Fall time
Storage time
http://www.SeCoSGmbH.com/
14-Aug-2018 Rev. C
tF - 0.5 -
tS 2 - 3
Unit
Test Conditions
V IC=5mA, IE=0
V IC=10mA, IB=0
V IE=2mA, IC=0
VCB=700V, IE=0
mA
VCE=400V, IB=0
mA VEB=9V, IC=0
VCE=5V, IC=0.5A
VCE=5V, IC=1.5A
V IC=1A, IB=0.25A
V IC=1A, IB=0.25A
MHz VCE=10V, IC=100mA, f=1MHz
µS IC=1A, IB1= -IB2=0.2A, VCC=100V
µS IC=250mA (UI9600)
Any changes of specification will not be informed individually.
Page 1 of 2




SeCoS

BD13003B Datasheet Preview

BD13003B Datasheet

NPN Plastic Encapsulated Transistor

No Preview Available !

Elektronische Bauelemente
TYPICAL CHARACTERISTIC
BD13003B
1.5A, 700V
NPN Plastic-Encapsulated Transistor
http://www.SeCoSGmbH.com/
14-Aug-2018 Rev. C
Any changes of specification will not be informed individually.
Page 2 of 2


Part Number BD13003B
Description NPN Plastic Encapsulated Transistor
Maker SeCoS
Total Page 2 Pages
PDF Download

BD13003B Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 BD13003B NPN Plastic Encapsulated Transistor
SeCoS





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy