Note: Below is a high-fidelity text extraction (approx. 800 characters) for
BD130. For precise diagrams, and layout, please refer to the original PDF.
BD130 S w w w .D a t a h t e e 4U . m o c NPN SILICON TRANSISTOR POWER LINERAR AND SWITCHING APPLICATIONS The BD130 is a silicon epitaxial-base NPN transistor in JEDEC TO...
View more extracted text
TIONS The BD130 is a silicon epitaxial-base NPN transistor in JEDEC TO3 metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers. ABSOLUTE MAXIMUM RATINGS Symbol VCEO VCBO VCEX IC IB PT Collector-Emitter Voltage Collector-Base Voltage Ratings Collector-Emitter Voltage Collector Current Base Current TJ w w w .D t a S a e h t e U 4 .c m o Value 60 100 100 15 7 Unit V V V A A Watts VBE=-1.5 V Power Dissipation @ TC = 45° 100 Junction Temperature -55 to +200 TS Storage Temperature °C COMSET SEMICONDUCTORS w w w .D at h S a t e e 4U .
BD130 Datasheet
