BD130
BD130 S w w w
.D a t a h t e e
4U
. m o c
NPN SILICON TRANSISTOR POWER LINERAR AND SWITCHING APPLICATIONS
The BD130 is a silicon epitaxial-base NPN transistor in JEDEC TO3 metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers.
ABSOLUTE MAXIMUM RATINGS
Symbol
VCEO VCBO VCEX IC IB PT
Collector-Emitter Voltage Collector-Base Voltage
Ratings
Collector-Emitter Voltage Collector Current Base Current
TJ w w w
.D t a
S a e h t e
U 4
.c m o
Value
60 100 100
15 7
Unit
V V V A A Watts
VBE=-1.5 V
Power Dissipation
@ TC = 45°
Junction Temperature
-55 to +200 TS
Storage Temperature
°C
SET SEMICONDUCTORS w w w
.D at h S a t e e
4U
. m o c
1/3
THERMAL CHARACTERISTICS Symbol
Rth J-C
Ratings
Thermal Resistance, Junction to...
