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SavantIC

BD132 Datasheet Preview

BD132 Datasheet

SILICON POWER TRANSISTOR

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SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
BD132
DESCRIPTION
www.dat·aCshoemet4pule.cmoment to type BD131
·With TO-126 package
·High current (Max:- 3A)
·Low voltage (Max: -45V)
APPLICATIONS
·For general purpose power applications
PINNING
PIN
DESCRIPTION
1 Emitter
2
Collector;connected to
mounting base
3 Base
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
VCBO
VCEO
Collector-base voltage
Collector-emitter voltage
VEBO
IC
ICM
IBM
Pt
Emitter -base voltage
Collector current (DC)
Collector current-Peak
Base current-Peak
Total power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
Tmb560
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
Thermal resistance from junction to ambient
Rth j-mb
Thermal resistance from junction to mounting base
VALUE
-45
-45
-4
-3
-6
-0.5
15
150
-65~150
UNIT
V
V
V
A
A
A
W
VALUE
100
6
UNIT
K/W
K/W




SavantIC

BD132 Datasheet Preview

BD132 Datasheet

SILICON POWER TRANSISTOR

No Preview Available !

SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
BD132
CHARACTERISTICS
Tj=25 unless otherwise specified
www.datasheet4u.com
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEsat-1 Collector-emitter saturation voltage IC=-0.5A; IB=-50mA
VCEsat-2 Collector-emitter saturation voltage IC=-2A; IB=-0.2A
VBEsat-1 Base-emitter saturation voltage
IC=-0.5A; IB=-50mA
VBEsat-2 Base-emitter saturation voltage
IC=-2A; IB=-0.2A
-0.3 V
-0.7 V
-1.2 V
-1.5 V
ICBO Collector cut-off current
IEBO Emitter cut-off current
hFE-1
DC current gain
hFE-2
DC current gain
VCB=-50V; IE=0
VCB=-50V; IE=0 Tj=150
VEB=-5V; IC=0
IC=-0.5A ; VCE=-12V
IC=-2A ; VCE=-1V
40
20
-50 nA
-10 µA
-50 nA
fT Transition frequency
IC=-0.25A; VCE=-5V ;f=100MHz 60
MHz
2


Part Number BD132
Description SILICON POWER TRANSISTOR
Maker SavantIC
Total Page 3 Pages
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