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NXP Semiconductors Electronic Components Datasheet

BD131 Datasheet

NPN power transistor

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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D100
BD131
NPN power transistor
Product specification
Supersedes data of 1997 Mar 04
1999 Apr 12


NXP Semiconductors Electronic Components Datasheet

BD131 Datasheet

NPN power transistor

No Preview Available !

Philips Semiconductors
NPN power transistor
FEATURES
High current (max. 3 A)
Low voltage (max. 45 V).
APPLICATIONS
General purpose power applications.
DESCRIPTION
NPN power transistor in a TO-126; SOT32 plastic
package. PNP complement: BD132.
Product specification
BD131
PINNING
PIN
1
2
3
DESCRIPTION
emitter
collector, connected to metal part of
mounting surface
base
handbook, halfpage
2
3
1
1 2 3 Top view
MAM254
Fig.1 Simplified outline (TO-126; SOT32)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
Tmb 60 °C
MIN.
65
65
MAX.
70
45
6
3
6
0.5
15
+150
150
+150
UNIT
V
V
V
A
A
A
W
°C
°C
°C
1999 Apr 12
2


Part Number BD131
Description NPN power transistor
Maker NXP
Total Page 8 Pages
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