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BD131 - NPN power transistor

Description

NPN power transistor in a TO-126; SOT32 plastic package.

PNP complement: BD132.

Simplified outline (TO-126; SOT32) and symbol.

Features

  • High current (max. 3 A).
  • Low voltage (max. 45 V).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D100 BD131 NPN power transistor Product specification Supersedes data of 1997 Mar 04 1999 Apr 12 Philips Semiconductors Product specification NPN power transistor FEATURES • High current (max. 3 A) • Low voltage (max. 45 V). APPLICATIONS • General purpose power applications. DESCRIPTION handbook, halfpage BD131 PINNING PIN 1 2 3 emitter collector, connected to metal part of mounting surface base DESCRIPTION NPN power transistor in a TO-126; SOT32 plastic package. PNP complement: BD132. 3 2 1 1 2 3 Top view MAM254 Fig.1 Simplified outline (TO-126; SOT32) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
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