ICPB1005 hemt equivalent, discrete power gan hemt.
* Frequency Range DC-14GHz
* 45.5dBm Nominal P3dB Pulsed
* Maximum PAE at 6GHz of 70%
* 18dB Linear Gain at 6GHz
* Drain Bias 28V
* Technology: Ga.
* Aerospace & Defense
* Broadband Wireless
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Description
The ICPB1005 is a GaN on SiC discrete HEMT that o.
The ICPB1005 is a GaN on SiC discrete HEMT that operates from DC-14GHz. The design is optimized for power and efficiency using field plate technology.
RF Performance | Simulated Conditions unless otherwise stated | TA=25°C, VD=28V, Pulse width=100uS.
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