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ICPB2002 Datasheet, ICONIC RF

ICPB2002 hemt equivalent, discrete power gan hemt.

ICPB2002 Avg. rating / M : 1.0 rating-11

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ICPB2002 Datasheet

Features and benefits


* Frequency Range DC-12GHz
* 41.5dBm Nominal P3dB
* Maximum PAE at 6GHz of 65%
* Drain Bias 28V
* Technology: GaN on SiC
* Lead-free and RoHS comp.

Application


* Aerospace & Defense
* Broadband Wireless Image Description The ICPB2002 is a GaN on SiC discrete HEMT, desig.

Description

The ICPB2002 is a GaN on SiC discrete HEMT, designed to operate either pulsed or CW from DC to 12GHz. The design is optimized for power and efficiency using field plate technology. RF Performance | Simulated Conditions unless otherwise stated | TA=2.

Image gallery

ICPB2002 Page 1 ICPB2002 Page 2 ICPB2002 Page 3

TAGS

ICPB2002
Discrete
Power
GaN
HEMT
ICPB2005
ICPB1005
ICPB1010
ICONIC RF

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