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ICPB1020 - Discrete Power GaN HEMT

Datasheet Summary

Description

The ICPB1020 is a GaN on SiC discrete HEMT that operates from DC-14GHz.

The design is optimized for power and efficiency using field plate technology.

Features

  • Frequency Range DC-14GHz.
  • 51.5dBm Nominal P3dB Pulsed.
  • Maximum PAE at 6GHz of 71%.
  • 18dB Linear Gain at 6GHz.
  • Drain Bias 28V.
  • Technology: GaN on SiC.
  • Lead-free and RoHS compliant.
  • Chip Dimensions: 0.82 x 4.56 x 0.10mm.

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Datasheet preview – ICPB1020

Datasheet Details

Part number ICPB1020
Manufacturer ICONIC RF
File Size 2.13 MB
Description Discrete Power GaN HEMT
Datasheet download datasheet ICPB1020 Datasheet
Additional preview pages of the ICPB1020 datasheet.

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Full PDF Text Transcription

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ICPB1020 | Discrete Power GaN HEMT 100 Watt Features • Frequency Range DC-14GHz • 51.5dBm Nominal P3dB Pulsed • Maximum PAE at 6GHz of 71% • 18dB Linear Gain at 6GHz • Drain Bias 28V • Technology: GaN on SiC • Lead-free and RoHS compliant • Chip Dimensions: 0.82 x 4.56 x 0.10mm Applications • Aerospace & Defense • Broadband Wireless Image Description The ICPB1020 is a GaN on SiC discrete HEMT that operates from DC-14GHz. The design is optimized for power and efficiency using field plate technology. RF Performance | Simulated Conditions unless otherwise stated | TA=25°C, VD=28V, Pulse Width 100uS, Duty Cycle=10% Frequency Output Power P3dB Bias Current PAE @ P3dB Gain @ P3dB GHz dB mA % dB 3 51.6 400 77.7 21 Typical 6 10 14 51.6 51.6 51.6 400 400 400 71.4 64.4 55.
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