ICPB1020 Key Features
- Frequency Range DC-14GHz
- 51.5dBm Nominal P3dB Pulsed
- Maximum PAE at 6GHz of 71%
- 18dB Linear Gain at 6GHz
- Drain Bias 28V
- Technology: GaN on SiC
- Lead-free and RoHS pliant
- Chip Dimensions: 0.82 x 4.56 x 0.10mm
ICPB1020 is Discrete Power GaN HEMT manufactured by ICONIC RF.
| Part Number | Description |
|---|---|
| ICPB1005 | Discrete Power GaN HEMT |
| ICPB1010 | Discrete Power GaN HEMT |
| ICPB2002 | Discrete Power GaN HEMT |
| ICPB2005 | Discrete Power GaN HEMT |
| ICP0349P | 2.7 - 3.5GHz 70W GaN PA MMIC |
The ICPB1020 is a GaN on SiC discrete HEMT that operates from DC-14GHz. The design is optimized for power and efficiency using field plate technology. ICONIC RF does not remend sustained operation near these survivability limits.