ICPB1020 Datasheet Discrete Power GaN HEMT

Manufacturer: ICONIC RF

ICPB1020 discrete power gan hemt by ICONIC RF - Datasheet Preview

Datasheet Details

Part number	ICPB1020
Manufacturer	ICONIC RF
File Size	2.13 MB
Description	Discrete Power GaN HEMT
Datasheet	ICPB1020 Datasheet

General Description

The ICPB1020 is a GaN on SiC discrete HEMT that operates from DC-14GHz.

The design is optimized for power and efficiency using field plate technology.

RF Performance | Simulated Conditions unless otherwise stated | TA=25°C, VD=28V, Pulse Width 100uS, Duty Cycle=10% Frequency Output Power P3dB Bias Current PAE @ P3dB Gain @ P3dB GHz dB mA % dB 3 51.6 400 77.7 21 Typical 6 10 14 51.6 51.6 51.6 400 400 400 71.4 64.4 55.7 15 10.1 7.4 Recommended operating conditions Absolute Maximum Ratings Drain Voltage (VDG) Drain Quiescent Current (ID) Drain current RF Drive (ID) Gate Voltage (VG) Power Dissipation (CW) Channel Temperature (Max) 12-32 V 0.4-1A 8A -3V 112W 225°C Drain to Gate Voltage (VDG) Gate Voltage Range (VG) Gate Current (IG) Power Dissipation (CW) CW Input Power Channel Temperature Storage Temperature 80 V -20V to 0V -20 to 60mA 128W +43dBm 275°C -65°C to +150°C Exceeding any one or combination of these limits may cause permanent damage to this device.

Overview

ICPB1020 | Discrete Power GaN HEMT 100 Watt.

Key Features

Frequency Range DC-14GHz.
51.5dBm Nominal P3dB Pulsed.
Maximum PAE at 6GHz of 71%.
18dB Linear Gain at 6GHz.
Drain Bias 28V.
Technology: GaN on SiC.
Lead-free and RoHS compliant.
Chip Dimensions: 0.82 x 4.56 x 0.10mm.

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