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HVV1214-100 Datasheet, HVVi

HVV1214-100 transistor equivalent, power transistor.

HVV1214-100 Avg. rating / M : 1.0 rating-14

datasheet Download (Size : 726.92KB)

HVV1214-100 Datasheet
HVV1214-100
Avg. rating / M : 1.0 rating-14

datasheet Download (Size : 726.92KB)

HVV1214-100 Datasheet

Features and benefits


* Silicon MOSFET Technology
* Operation from 24V to 50V
* High Power Gain
* Extreme Ruggedness
* Internal Input and Output Matching
* Excellent Th.

Application

Features
* Silicon MOSFET Technology
* Operation from 24V to 50V
* High Power Gain
* Extreme Ruggedness .

Description

The high power HVV1214-100 device is an enhancement mode RF MOSFET power transistor designed for pulsed applications in the L-Band from 1200MHz to 1400MHz. The high voltage HVVFET™ technology produces over 100W of pulsed output power while offering h.

Image gallery

HVV1214-100 Page 1 HVV1214-100 Page 2 HVV1214-100 Page 3

TAGS

HVV1214-100
Power
Transistor
HVVi

Manufacturer


HVVi

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