HVV1011-035 transistor equivalent, rf transistor.
High Power Gain Excellent Ruggedness 50V Supply Voltage
ABSOLUTE MAXIMUM RATINGS
Symbol VDSS VGS IDSX PD2 TS
TJ
Parameter Drain-Source Voltage Gate-Source Voltage Drain.
operating at frequencies of 1030 MHz and 1090 MHz.
PACKAGE
FEATURES
High Power Gain Excellent Ruggedness 50V Supply Vo.
The high power HVV1011-035 device is a high voltage silicon enhancement mode RF transistor designed for L-band pulsed applications operating at frequencies of 1030 MHz and 1090 MHz.
PACKAGE
FEATURES
High Power Gain Excellent Ruggedness 50V Supply V.
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