HVV1011-300 transistor equivalent, power transistor.
* Silicon MOSFET Technology
* Operation from 24V to 50V
* High Power Gain
* Extreme Ruggedness
* Internal Input and Output Matching
* Excellent Th.
Features
* Silicon MOSFET Technology
* Operation from 24V to 50V
* High Power Gain
* Extreme Ruggedness .
The high power HVV1011-300 device is an enhancement mode RF MOSFET power transistor designed for pulsed applications in the L-Band from 1030MHz to 1090MHz. The high voltage HVVFET™ technology produces over 300W of pulsed output power while offering h.
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