HVV1214-025 Datasheet, ASI

High Power Gain Excellent Ruggedness 50V Supply Voltage ABSOLUTE MAXIMUM RATINGS Symbol VDSS VGS IDSX PD2 TS TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain.

operating over the frequency range of 1200 MHz and 1400 MHz. FEATURES High Power Gain Excellent Ruggedness 50V Supply Vo.

The high power HVV1214-025 device is a high voltage silicon enhancement mode RF transistor designed for L-band pulsed radar applications operating over the frequency range of 1200 MHz and 1400 MHz. FEATURES High Power Gain Excellent Ruggedness 50V S.

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