HVV1214-025S datasheet, transistor equivalent, HVVi

Features and benefits

* High Power Gain
* Excellent Ruggedness
* 48V Supply Voltage ABSOLUTE MAXIMUM RATINGS Symbol VDSS VGS IDSX PD2 TS TJ Parameter Drain-Source Voltage Gate-.

Application

operating over the frequency range from 1.2 GHz to 1.4 GHz. FEATURES
* High Power Gain
* Excellent Ruggedness .

Description

The high power HVV1214-25 device is a high voltage silicon enhancement mode RF transistor designed for L-Band pulsed radar applications operating over the frequency range from 1.2 GHz to 1.4 GHz. FEATURES
* High Power Gain
* Excellent Rugg.

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