ATF-25735 fet equivalent, 0.5-10 ghz general purpose gallium arsenide fet.
* High Output Power: 19.0␣ Bm Typical P 1dB at 4␣ GHz
* High Gain: 12.5␣ dB Typical G 1 dB at 4 GHz
* Low Noise Figure: 1.2 dB Typical at 4 GHz
* Cost Eff.
in the 0.5-10 GHz frequency range.
This GaAs FET device has a nominal 0.3 micron gate length using airbridge interconnec.
The ATF-25735 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor housed in a cost effective
microstrip package. This device is designed for use in general purpose amplifier and oscillator applications in the 0.5-10 G.
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