ATF-25570 fet equivalent, 0.5-10 ghz general purpose gallium arsenide fet.
* High Output Power: 20.5 dBm Typical P1 dB at 4 GHz
* Low Noise Figure: 1.0 dB Typical at 4 GHz
* High Associated Gain: 14.0 dB Typical at 4 GHz
* Hermet.
in the 0.5-10 GHz frequency range.
This GaAs FET device has a nominal 0.3 micron gate length using airbridge interconnec.
The ATF-25570 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor housed in a hermetic, high reliabil-
ity package. This device is designed for use in general purpose amplifier and oscillator applications in the 0.5-1.
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