ATF-25170 fet equivalent, 0.5-10 ghz low noise gallium arsenide fet.
* Low Noise Figure: 0.8 dB Typical at 4 GHz
* High Associated Gain: 14.0 dB Typical at 4 GHz
* High Output Power: 21.0 dBm Typical P1 dB at 4 GHz
* Hermet.
The ATF-25170 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor
housed in a hermetic, high reliability package. Its noise figure makes this device appropriate for use in low noise amplifiers operating in the 0.5-10 .
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